The formation and structure of CVD W films produced by the Si reduction of WF(6).

In this paper we present data on the formation and structure of CVD W films deposited by the Si reduction of WF(6). Although the great majority of CVD W films deposited for IC applications are ostensibly deposited by H(2) reduction, the Si reduction of WF(6) always occurs first, even in the presence of copious amounts of H(2). Therefore, it is the Si reduction reaction that determines the nature of W/Si interface, and in turn, such important properties as contact resistance and leakage current.