The Influence of Electronic Excitation on the Performance and Reliability of Semiconductor Devices

The discovery of the role of nonradiative recombination in limiting the useful life of semiconductor lasers has changed the methodology of device 'burn-in' testing and the principles of materials design. The basis of this technological change is the sensitivity of point defects, dislocations, impurities and interfaces to a chemical change induced by electronic rather than thermal excitation. A summary of the physical principles governing recombination enhanced reactions, electric field enhanced phenomena, and charged state modification of structure will be projected on examples of limitations of noise and speed in high performance devices and of the reliability of minority carrier devices.