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The Physical Chemistry of Organic Field-Effect Transistors

03 February 2000

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This is an invited review for the Journal of Physical Chemistry, covering fabrication and performance of organic-based field-effect transistors (FETs). The electronic states of organic solids, crystal growth processes, film alignment and morphology, and charge transport mechanisms are discussed. Discontinuities in the active layers and nonidealities in the device behavior are highlighted, and are presented as opportunities for further physical chemistry investigation.