The structure of Ge(x)Si(1-x)/Si(100) Interfaces and superlattices.
01 January 1984
The structure of Ge(x)Si(1-x)/Si(100) interfaces and superlattices grown by molecular beam epitaxy is investigated using high resolution electron microscopy and ion channeling. Single layers of Ge(x)Si(1-x) may be grown commensurately upon silicon (100) surfaces at 550C up to a critical thickness which is a function of alloy composition. Interfaces in both commensurate and locally commensurate are shown to be sharp and constrained to a few atomic planes.