The Use of Ethyldimethylindium in the Low Pressure MOCVD Growth of InGaAsP Double Heterostructure Lasers
16 January 1989
We report the first use to our knowledge of ethyldimethylindium, C sub 2 H sub 5 (CH sub 3) sub 2 In, as an indium source in the low-pressure MOCVD growth of InGaAsP active layers for double-heterostructure lasers. Undoped InGaAsP layers grown on (100) InP substrates are between 0.1-0.5microns thick. Epilayers grown with this source are characterized by X-ray diffraction, photoluminescence, and Hall measurements. Nuclear magnetic resonance, NMR, studies of commercially available EDMIn indicate that the source is pure and suitable as an alternate source for trimethylindium, TMIn.