Thermal oxidation of InAs(x)P(1-x).

Group V metalloid inclusions in native oxides on III-V based materials result in poor dielectric isolation which contributes to high leakage currents. Past studies of thermally oxidized InP, InAs, and In(x)Ga(1-x)As(y)P(1-y) have detected the presence of elemental red P, elemental As, and As(z)P(1-z) respectively in native oxide films on those substrates. The observation of As(z)P(1-z) rather than a two phase mixture of elemental P and As was notable in the quaternary films. The present study has examined thermally oxidized films on polycrystalline InAs(x)P(1-x) via Raman scattering.