Thermal oxidation of undoped LPCVD polycrystalline-silicon films.
01 January 1986
The thermal oxidation behavior of undoped LPCVD polysilicon films deposited at 630C or 575C (proportional to -poly) have been studied over temperatures ranging from 900C to 1050C, for durations of 20 min. to 6 hr. It was found that oxide thickness grown on undoped polysilicon films were in general smaller than that for (111) but larger than that for (100) single crystal silicon. No significant differences between the oxidation behaviors of as-deposited polysilicon (630C) and proportional to -poly (575C) were observed.