Towards Planar Processing for InP DHBTs
01 January 2003
Silicon-like planar InP DHBTs have always been the goal for researchers to enhance their integration capabilities. In addition, heat dissipation for large-scale device integration will be an issue for the traditional mesa DHBT structure while maintaining high-speed performance. We demonstrate that by developing ion-implantation technologies, planar InP DHBTs can be built successfully.