Transient capacitance analysis of III-V semiconductors with organic-on- inorganic semiconductor contact barrier diodes.
01 January 1985
We have investigated the suitability of organic-on-inorganic (OI) semiconductor contact barrier diodes for use in deep level transient spectroscopy (DLTS) of III-V semiconductors. The diodes are formed by vacuum deposition of a thin film of an organic molecular solid onto semiconductor samples as has been previously reported.