Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode
01 April 2000
A high-speed waveguide In0.53Ga0.47As-In-0.52 Al0.48As Separate absorption, charge, and multiplication avalanche photodiode suitable for operation at 1.55 mu m has been demonstrated. A unity-gain bandwidth of 27 GHz was achieved with a gain-bandwidth product of 120 GHz.