X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence band discontinuity.
01 January 1986
The valence band discontinuity DeltaE(v) has been determined for the (100) GaSb/AlSb strained-layer heterojunction with a room temperature lattice mismatch of 0.65%, using x-ray photoemission core level spectroscopy. For 30Angstroms epitaxial layers of AlSb grown on GaSb, the measured valence band offset was DeltaE(v) = 0.40(+-).15eV. The reverse growth sequence consisting of a thin GaSb layer grown on an AlSb buffer exhibited the same valence band offset, indicating that for the (100) oriented heterojunction DeltaE(v) is not strongly affected by the growth sequence.