1. Home
    Item seperator
  3. Item seperator
    X-ray Photoemission Core Level Determination of the Valence- Band Discontinuities in GaSb/AlSb and GaSb/InAs Heterojunctions

X-ray Photoemission Core Level Determination of the Valence- Band Discontinuities in GaSb/AlSb and GaSb/InAs Heterojunctions

New Image

In this work, x-ray photoemission core level spectroscopy (XPS) has been used to determine the valence-band discontinuities DELTA E sub v for thin (100)-oriented heterojunctions grown by MBE in two strained- layer systems: GaSb/AlSb and GaSb/InAS. These systems are of interest for testing theories which predict band lineups, and previous determinations of this important parameter using other techniques have proven inconclusive.