X-Ray Scattering Studies of the Si-SiO sub 2 Interface.

We report observation of microcrystalline interface phases at the SiO sub 2-Si(100) interface. Most of the diffraction peaks from these phases can be indexed using the cristobalite structure and have varying degrees of orientational order depending on preparation techniques. Data are presented for oxides prepared on Si (100) surfaces by thermal oxidation, by electron beam evaporation and by native oxide formation.