Integrated push-push oscillators, achieving high output power at 210, 235 and 287 GHz, were realized in a 0.5 um emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a maximum oscil
We describe an efficient and compact terahertz (THz) illumination system as part of an active THz imager.
Presented is the performance of a highly integrated RF single-pole double-throw (SPDT) switch fabricated in a 0.18 mu m bulk CMOS process and housed in a low-cost laminated multi-chip module (MCM-L
It is shown that with state-of-the-art microwave CAD and enhanced active and passive modelling, the concept of a highly integrated low cost macro-function inside a single package can be successfull
A connected graph is highly irregular if each of its vertices is adjacent to vertices with distinct degrees.
The current-frequency characteristics of any current-controlled-oscillator (CCO) can be linearized using a simple circuit containing a switched capacitor.
This letter reports a differential photoreceiver module designed for short reach applications such as access network and data center interconnect.
Spectral hole-burning in semiconductor lasers manifests as a nonlinear suppression of the mode gain by a few percent.
Channel rates exceeding 40 Gbit/s are currently very difficult to achieve with high-speed electronics.
Composite As2Se3/PES (polyethersulfone) fibers have been fabricated that have As2Se3 core diameters between 0.5 and 3 microns surrounded by a PES cladding approximately 50 to 150 microns in diamete
