Measured small-signal frequency response characteristics of directly modulated long-cavity and short-cavity InGaAsP double- channel planar buried heterostructure (DCPBH) lasers are reported.
The theory and characteristics of the triangular loop elements were described in Commun., 29,16-18 (Aug., 1949).
A mode-adapted Semiconductor Optical Amplifier (SOA) has been fabricated and packaged. Statistics for 8 packaged devices, at 1550 nm, indicate a fiber-to-fiber gain of 26.3 dB +/- 1.
Many materials systems are currently under consideration as potential replacements for SiO(2) as the gate dielectric material for sub-0.1 mum complementary metal-oxide-semiconductor (CMOS) technolo
We analyze measurements of the 0.5-1.0 MeV/nucleon H/He intensity ratio from the Ulysses spacecraft during its first (1992-94) and second (1999-2000) ascent to southern high latitude regions of the
We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides.
Optimal dense wavelength-division multiplexed transmission is obtained based on high-order periodic dispersion-managed solitons in a dispersion-slope-compensated fiber link.
the UMTS Channel Unit Processor for 3GPP Base Station introduced earlier by Lucent technologies is an advanced 3G BTS baseband processor system that includes the QPSK Tx and couple of other key ASI
SiGe-based high-speed ADCs look promising for emerging higher frequency band applications such as coherent optical systems or millimeter-wave radios because of the inherent advantages of high-speed
Recently InP/InGaAs/InP double-heterostructure bipolar transistors (DHBT) have attracted much attention in the realization of high-speed optical communication systems [1-3].
