A crescent-shape mesa-substrate buried-heterostructure (CMSB) InGaAsP laser (— = 1.3 —m) was grown by a single-step liquid phase epitaxy.
High-temperature (T) studies of La1-xCaxMnO3 show that charge and phonon transport is significantly suppressed in a narrow doping region of x approximate to1/2 and in a wide T range up to 900 K, wh
The effect of temperature on the small-signal radio-frequency (RF) performance of submicron AlGaN/GaN high-electron-mobility transistors on SiC has been studied from room temperature (RT) up to 600
The history and significance of superconductivity will be discussed, including present and anticipated applications.
C-60 single crystals have been intercalated with CHCl3 and CHBr3 in order to expand the lattice.
TN PRACTICALLY all pulsed oscillators such as those used in radar, some means must be provided to apply the pulse voltage to the oscillator circuit.
New low dispersion IUE spectra of a faint sdOB star (the "Schweizer- Middleditch" star) located in a direction near the center of the SN 1006 remnant are presented.
The desire for high voltage rectifiers in the electronic industry has pushed the peak inverse voltage of solid state rectifiers to higher and higher values.
We have fabricated 1 kV 4H and 6H SIC Schottky diodes utilizing a metal-oxide overlap structure for electric field termination.
based on an Al-free active region with a strain compensated quantum well, we have obtained improved internal parameters, and a high wall-plug efficiency of 68% on a broad area laser bar.
