We have evaluated the performance of the InP double heterojunction bipolar transistor as a room temperature sensitive detectors for THz computed tomography applications in the 300 GHz transparency
We report high-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical beam epitaxy.
We demonstrate an IQ modulator by employing two monolithic injection-locked VCSELs which are driven to produce pure amplitude modulation.
No abstract provided refer to folder released on 111584
The performance of high-speed lithium modulators and switches make them attractive for high bit-rate communication systems.
An InP-based high-speed optical modulator is presented.
We demonstrate a single-drive push-pull silicon Mach-Zehnder Modulator (MZM) with a !-phase-shift voltage of 3.1 V and speed up to 30 Gb/s.
The concentricity of an optical fiber in a plastic coating affects the fiber strength, transmission loss, and the connectorization process.
The field of high-speed measurements for optical telecommunication systems is reviewed. An emphasis is placed on diagnostics evaluating the temporal electric field of light, i.e.
We report on the performance of a 38 GHz Quaternary phase shift keyed (QPSK) modulator/demodulator at information rates up to 8 Gbit/s.
