Publications

We describe a simple method and device design that enables fast in-plane electro-optic modulation in conventional nematic liquid crystal (NLC) devices.

Recently, the bandwidths of semiconductor lasers, detectors and optical transmission systems have been dramatically increased.

We present characteristics of InGaAsP electroabsorption modulators with variable length and mesa width.

Compact and fast detectors, for imaging and wireless communication applications, require technology where low-noise amplifiers are integrated with the detector.

We have evaluated the performance of the InP double heterojunction bipolar transistor as a room temperature sensitive detectors for THz computed tomography applications in the 300 GHz transparency

We report high-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical beam epitaxy.

We demonstrate an IQ modulator by employing two monolithic injection-locked VCSELs which are driven to produce pure amplitude modulation.

No abstract provided refer to folder released on 111584

The performance of high-speed lithium modulators and switches make them attractive for high bit-rate communication systems.

An InP-based high-speed optical modulator is presented.