Intense single-peak photoluminescences of free exciton origin were observed in In sub x Ga sub (1-x) As/GaAs strained layer quantum wells with x ranging from 0.09 to 0.20.
We report optical emission and absorption spectra of modulation- doped GaAs multiple quantum wells to fields of 30T and temperatures >= 0.35K. Two regions are studied in detail.
Thermalization mechanisms of photoexcited carriers in a-Si:H have been studied by monitoring the rate of spectral shift of the main luminescence band as a function of temperature.
Cleaved edge overgrown semiconductor quantum wires containing a one-dimensional electron gas with few occupied subbands are proved by optical experiments.
One of the simplest ways to exploit the large information bandwidth of an optical carrier is to place radio-frequency subcarrlers on the optical beam which can, in turn, be modulated.
Recent optical technologies are providing higher flexibility to next generation access networks: on the one hand, providing progressive FTTx and specifically FTTH deployment, progressively shorteni
We present two concepts dedicated to the optical summation of RF signals for radar applications. The first technique relies on a photodiode simultaneously illuminated on its top and back sides.
Results for optical switch dimensioning are obtained by analysing an urn occupancy problem in which a random number of balls is used.
esults for optical switch dimensioning are obtained by analysing an urn occupancy problem in which a random number of balls is used.
Next-generation switches and routers may rely on optical switch fabrics to overcome cost, power, space and scalability problems that arise in sizing traditional electrical backplanes into the terab
