Within recent years, there has been a significant amount of interest in applying the new and developing photonics technology for telecommunications switching.
We have used an eight-band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures.
Estimates are presented for the lower lying optical transition energies associated with the psuedomorphic 4x4 monolayer Si/Ge strained layer superlattice on Si(001).
Optical transmission spectroscopy of a 2D electron gas is shown to be a sensitive probe of the Fermi level and electronic density of states.
We present measurements of transmission of infrared radiation through double-layer metallic grating structures.
Subwavelength structures on the surface of a metal can strongly modify its interaction with light [1].
We measure the transmission of IR radiation through double-layer metal films with periodic arrays of subwavelength holes.
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We have experimentally shown that the physical design of a transparent network should be tailored to both the network topology and the network traffic matrix.
We review the electronic generation and transmission of recently demonstrated serial transport technologies at 100 Gb/s, including binary and multi-level formats
