Absorption and reflection spectroscopy of the 2D electron gas in GaAs quantum wells exhibits sharp features due to transitions between electron and hole Landau levels.
Free carriers in semiconductor heterojunctions and quantum wells induce fundamental changes in the optical properties.
Spectroscopy was performed along three distinct crystallographic axes of a high refractive index contrast photonic crystal and the spectra were compared with theoretical calculations.
The absorption spectrum of Cu sub 4 sup + has been recorded in the visible region of the spectrum (710-370nm) by monitoring the photodissociation of Cu sub 4 sup + to give Cu sub 3 sup +.
We observe one-dimensional confinement in the optical emission and inelastic light scattering spectra of laterally patterned modulation doped heterostructures.
Spectroscopic studies using the diamond cell are reviewed with selected examples from recently published results.
Experimental demonstration of optical speedup at transparency (OSAT) has been performed on a 1 mm long semiconductor optical amplifiers (SOA).
We describe the first experimental observation of an extremely fast shift of the n=1 exciton transition energy in GaAs quantum well heterostructures.
The optical Stark effect and its dynamics have been observed for the first time in organic dye molecules in solution using femtosecond optical pulses.
An overview of optical strategies for economical next-generation 50 and 100G PON is given.
