The physical origin of the excess capacitance at single crystal, epitaxial type-A and type-B NiSi sub 2 Schottky contacts has been identified.
In semiconductor quantum well structures (QWS) quantum size effects produces fundamental modifications of the optical and electronic properties.
We have made extensive microdiffraction studies of the crystallographic orientation of recrystallized (001) Si films, and transmission electron microscopy (TEM) analysis of dislocations at the init
The origin of the substrate hole currents after gate oxide breakdown in metal-oxide-semiconductor field-effect transistor (nMosFET) devices is investigated, using spectroscopic and conventional pho
We identify the physical origin of the excess capacitance at Schottky diodes without an interfacial layer, i.e. intimate Schottky contacts.
Neutron Compton scattering measurements in a variety of materials have shown a relative deficit in the total signal from hydrogen compared to deuterium and heavier ions.
We report new experimental and theoretical results for SiGe (001) strained layer superlattices.
This paper presents the design, fabrication and characterization of a MEMS-Based Single Pole Double Throw (SPDT) circuit for millimeterwave applications.
We describe the algorithmic and implementation ideas behind a tool, Orion, for finding common programming errors in C and C++ programs using static code analysis.
In this letter, the information security of an optical code-based communication system employing orthogonal differential phase-shift keying (DPSK)/code-shift keying (CSK) modulation is first invest
