Origin of Excitonic Optical Nonlinearities in Semiconductor Quantum Wells
28 January 1987
In semiconductor quantum well structures (QWS) quantum size effects produces fundamental modifications of the optical and electronic properties. If the layer thickness is smaller or of the order of the bulk exciton Bohr diameter (e.g. 300A for GaAs) the exciton structure and hence of the absorption resonances are strongly modified.