Publications

This paper presents simulation results of a dual-polarized 2×2 element sub-array antenna element at 15 GHz center frequency.

Dual-Polarized Channel Outages During Multipath Fading By T. O.

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dime

Coherent lidar is reported with precision 130um and multi-target resolution 6mm.

The peculiar behavior of the absorber photocurrent of two-section quantum-dot lasers with different gain-bandwidth chirping is studied numerically and by experiments.

Incorporation of N into GaInAs results in N-localized-states close to the conduction band minimum.

We have demonstrated a coupled dual cavity, femtosecond laser system that is self-starting, robust and independently tunable.

S I N C E the invention of the transistor there has been a natural tendency to compare its properties with those of a vacuum tube triode.

Let f(t) and K(t) be non-negative functions that are dominated by integrable step functions that are constant over contiguous unit intervals.

Data Centre TCP (DCTCP) was designed to provide predictably low queuing latency, near-zero loss, and throughput scalability using explicit congestion notification (ECN) and an extremely simple mark