Publications

Transport measurements of high-mobility two-dimensional electron systems at low temperatures have revealed a large resistance anisotropy around half-filling of excited Landau levels.

Electron channeling experiments performed on individually scanned, single columns of atoms show that in highly n-type Si grown at low temperatures the primary electrically deactivating defect canno

In an ultraclean 2D electron system (2DES) subjected to crossed millimeterwave (30-150 GHz) and weak (B 2 kG) magnetic fields, a series of apparently dissipationless states emerges as the system i

Two features have been observed in the infrared absorption spectrum of the new superconductors La sub 2-x Sr sub x Cu O sub 4.

A hot carrier Shubnikov-de Haas effect has been used to measure the power loss by two-dimensional holes in coherently strained Ge sub (0.2) Si (0.8)/Si heterostructures at low temperatures.

The three dimensional Ising spin glass in zero field with neatest neighbor interactions having a '+/-J' distribution is studied by Monte Carlo simulations for samples of linear dimension L with 3

Magnetotransport experiments on high mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures have revealed striking anomalies near half filling of several spin-resolved yet highly e

We report high-resolution inelastic x-ray scattering measurements in the metallic liquid Li(NH3)(4), which to a good approximation can be treated as a dilute alkali metal.

Measurements of the transport critical-current density (J sub c), magnetization J sub c, and magnetoresistance in a number of bulk sintered samples of Y sub 1 Ba sub 2 Cu sub 3 O sub x from several

We report measurements of GaAs/AlxGa1-xAs undoped field-effect transistors in which two-dimensional electron gases (2DEG's) of exceptional quality and versatility an induced without modulation dopi