The evolution of personal computers and network servers is pushing the micro-electronics industry to integrate high speed transceiver macrocells onto CMOS Integrated Circuits (IC).
The intensity noise spectrum is measured for Antimonide based 1.3 micron vertical cavity surface emitting lasers.
This talk will provide a general overview of the high speed electronics necessary to provide the essential physical layer interface between the high speed TDM optical signals and the lower bit-rate
We report the fabrication and performance of enhancement mode InP MIS field effect transistors having transconductances as high as 200 mS/mm for a gate length of 1micron.
Two-segment distributed feedback diode lasers provide tuning and fast switching of the laser frequency.
Several GaAs integrated circuits are currently in volume production by AT&T-Microelectronics for insertion into the AT&T 1.7 Gbit/s long haul lightwave transmission network.
We demonstrate a 4-bit 12.5 GSample/s optical arbitrary waveform generator (OAWG) based on an InP optoelectronic IC and a low phase-noise mode-locked laser.
GaAs has begun to emerge as a viable IC technology.
High-speed liquid-crystal waveplates fabricated between tips of optical fibers show excellent performance when implemented for DOP measurements and PMD compensation in 40 Gb/s system.
High frequency modulation properties of mid-infrared emission from graded superlattice quantum cascade lasers are investigated up to a frequency of 2 GHz, showing the high frequency data transmissi
