An InP HBT technology developed at Lucent Technologies Bell laboratories, with peak ft-100 GHz is used to design and fabricate a limiting amplifier with high gain and bandwidth margin at 10 Gbps.
AlGaAs/GaAs heterojunction bipolar transistors (HBT's) with graded band gap bases were fabricated from computer controlled MBE layers.
High-performance and compact 40-Gb/s driver amplifiers were realized in 1.2-mum emitter double-heterojunction InGaAs-InP HBT (D-HBT) technology with a maximum cut-off frequency (f(T)) of 150 GHz an
We present a high speed phototransistor with integrated waveguide based on our InP double hetrojunction bipolar transistor (DHBT) process technology.
For long-wavelength (1.3microns and 1.5microns) high-bit-rate (>400 Mbit/s) lightwave systems the highest receiver sensitivities have been achieved with III-V compound avalanche photodiodes with
We investigated the evaporative cooling performance of a nanoporous membrane based thermal management solution designed for ultra-high heat flux dissipation from high performance integrated circuit
Water is often considered as the highest performance working fluid for liquid-vapor phase change due to its high thermal conductivity and large enthalpy of vaporization.
Low energy (20 eV) free electrons produced in above-threshold ionization have been scattered by an intense optical standing wave (the Kapitza-Dirac effect).
The scalability of MOS/CMOS devices and giga-scale integrated of silicon can be primarily attributed to the fact that silicon has a native gate dielectric SiO sub 2 which has been hyper-scaled from
We present an evanescent waveguide InGaAs/InGaAsP UTC PD with respectively a bandwidth Gt 50 GHz, a responsivity of 0.55 A/W and an IP3 of 19.7 dBm at 10 mA and 20 GHz.
