We demonstrate high-reflectivity crack-free Al0.13Ga0.87N/Al0.
This paper describes an original planar solution used to realize a high rejection planar filter in C-band for a given spatial application.
We present a single-mode, polarization-maintaining, Er/Yb-codoped cladding-pumped amplifier with up to 49 dB of gain, 13W output power, a 30 dB polarization-extinction ratio, 12.9% electrical to op
Over a hundred years of development of submarine cables for the telecom industry has resulted in highly reliable commercially off the shelf (COTS) products.
First observations of 2-section InAs/InP quantum-dash passive mode locking (ML) at fundamental repetition frequencies up to ~100 GHz are presented.
A high resistance narrow band quantum cascade photodetector (QCD) is presented.
The sheet resistance, Hall mobility, and carrier concentration as a function of He ion dose have been measured across the In sub (l-x-y) Ga sub x Al sub y AS system.
Helium implants over a fluence range of 10(11) to 10(16) ions/cm (2), reproducibly form high resistivity regions in both p- type and n-type InP.
High-resolution angle-resolved photoemission has been applied to study Al(111) and Al(001). Two new surface states at gamma and kappa of Al(111) have been observed and characterized.
A high resolution soft x-ray synchrotron radiation beamline, dubbed Dragon, has been constructed recently.
