Publications

Amorphous silicon Schottky barrier photodetectors with internal quantum efficiencies of 36% and sampling ocilloscope limited response times of 40 ps (FWHM) have been fabricated.

Current North American Time Division Multiple Access systems support voice services and circuit data services at a rate limited to 9.6 kb/s.

Distributed Bragg reflector (DBR) structures based on AlN/GaN have been grown on (0001) sapphire by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy (ECR-MBE).

A number of distributed Bragg reflectors (DBRs) based on AlN/GaN quarterwave layers have been grown on (0001) sapphire by electron cyclotron resonance plasma-assisted molecular-beam epitaxy.

We demonstrate high-reflectivity crack-free Al0.13Ga0.87N/Al0.

This paper describes an original planar solution used to realize a high rejection planar filter in C-band for a given spatial application.

We present a single-mode, polarization-maintaining, Er/Yb-codoped cladding-pumped amplifier with up to 49 dB of gain, 13W output power, a 30 dB polarization-extinction ratio, 12.9% electrical to op

Over a hundred years of development of submarine cables for the telecom industry has resulted in highly reliable commercially off the shelf (COTS) products.

First observations of 2-section InAs/InP quantum-dash passive mode locking (ML) at fundamental repetition frequencies up to ~100 GHz are presented.

A high resistance narrow band quantum cascade photodetector (QCD) is presented.