Homoepitaxial Si films have been deposited by Rapid Thermal Chemical Vapor Deposition (RTCVD), a growth technique based on the combination of rapid thermal annealing lamps and a chemical vapor depo
High quality long wavelength InGaAsP/InP lasers were grown by atmospheric organo-metallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH3.
A series of GaInAs/InP quantum well form 10angstroms to 135angstroms have been grown by atmospheric OMVPE using pressure balancing techniques.
Rapid thermal chemical deposition (RTCVD) is a processing technique that results the combination of radiant heating lamps and a CVD chamber.
Ion beam synthesis of a buried SiO(2) layer is an attractive silicon-on-insulator technology for high speed CMOS circuits and radiation hardened devices.
GaAs-Al(x)Ga(1-x)As single- and multiquantum well structures grown by metals organic chemical vapor deposition, have been examined for the first time in detail using low temperature photoluminescen
Amorphous silicon Schottky barrier photodetectors with internal quantum efficiencies of 36% and sampling ocilloscope limited response times of 40 ps (FWHM) have been fabricated.
Current North American Time Division Multiple Access systems support voice services and circuit data services at a rate limited to 9.6 kb/s.
Distributed Bragg reflector (DBR) structures based on AlN/GaN have been grown on (0001) sapphire by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy (ECR-MBE).
A number of distributed Bragg reflectors (DBRs) based on AlN/GaN quarterwave layers have been grown on (0001) sapphire by electron cyclotron resonance plasma-assisted molecular-beam epitaxy.
