Publications

We describe the growth of high quality AIN and GaN on Si(1 1 1) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3).

Presented is an embedded coding strategy using the Multimode Transform Predictive Coding (MTPC) framework.

This paper reports on an inductor fabrication method capable to deliver high quality factor (Q) and high self-resonance frequency (SRF) devices using quartz insulating substrates and thick high-con

We describe the growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia.

Homoepitaxial Si films have been deposited by Rapid Thermal Chemical Vapor Deposition (RTCVD), a growth technique based on the combination of rapid thermal annealing lamps and a chemical vapor depo

High quality long wavelength InGaAsP/InP lasers were grown by atmospheric organo-metallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH3.

A series of GaInAs/InP quantum well form 10angstroms to 135angstroms have been grown by atmospheric OMVPE using pressure balancing techniques.

Rapid thermal chemical deposition (RTCVD) is a processing technique that results the combination of radiant heating lamps and a CVD chamber.

Ion beam synthesis of a buried SiO(2) layer is an attractive silicon-on-insulator technology for high speed CMOS circuits and radiation hardened devices.

GaAs-Al(x)Ga(1-x)As single- and multiquantum well structures grown by metals organic chemical vapor deposition, have been examined for the first time in detail using low temperature photoluminescen