We investigate the dynamics of non-thermal carrier distributions in undoped and modulation doped GaAs Quantum Well Structures (layer thickness ~ 100A) with near bandgap-resonant intense femtosecond
The storage capacity of wide-spread optical media such as CD-ROMs and DVDs is limited by the wavelength of lighr and by the fact that these are surface-based technologies.
Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy and temperature-and time-resolved photoluminescenc
Currently, integrated circuits (IC) are individually packaged to provide protection from mechanical and environmental damage during testing, shipping, and use in electronic equipment.
Throughwafer vias up to 100 mum deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF6/O-2 at a controlled rate of similar to0.6 mum min(-1) and use of Al masks.
Ultra high-density hybrid integration for MEMS mirror chips with several thousand I/Os has been developed.
The long held promise of using volume holography to deliver high performance optical storage is reviewed. The problems, which limited the development for many years, are assessed.
We report the first high detectivity, (D sup * = 1.0 x 10 sup (10) cm square root Hz/W), high responsivity (R sub V = 30,000 V/W), GaAs/Al sub x Ga sub (1-x) As multiquantum well detector, sensiti
We report the operation of broad band InAs(0.80)Sb(0.15) pn junction photodetectors grown on InAs by liquid phase epitaxy.
New Hf-Sn-Ti-O thin-film high dielectric constant materials were identified using a compositional-spread approach.
