We report on the design and characterization of uni-traveling-carrier photodiodes (UTC-PDs) achieving simultaneously high speed (ges 20 GHz), high responsivity (0.83 A/W), and high saturation curre
1300 nm InAs quantum dot narrow ridge superluminescent diodes have reached a high power of 70 mW/facet under CW operation, together with a broad spectral width of 80 nm.
High Power Optical Amplifiers (HPOAs) are key components in high-bandwidth, free-space communication systems.
1.32 mum InAs quantum dot narrow ridge lasers have reached a record single spatial mode optical power of 130 mW/facet under CW operation.
A new experimental method has been developed to probe ion/molecule reactions at gas pressures up to 0.1 torr.
TUNABLE high Q resonant cavity is a particularly useful tool for determining the over-all performance of a radar quickly and easily1.* Further, since it uses the radar transmitter as its only sourc
We describe the growth of high quality AIN and GaN on Si(1 1 1) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3).
Presented is an embedded coding strategy using the Multimode Transform Predictive Coding (MTPC) framework.
This paper reports on an inductor fabrication method capable to deliver high quality factor (Q) and high self-resonance frequency (SRF) devices using quartz insulating substrates and thick high-con
We describe the growth of hexagonal GaN on Si(111) by gas source molecular beam epitaxy with ammonia.
