We have fabricated InGaAsP gain guided laser arrays emitting at 1.3micron.
We report on the growth and power performance of GaN/AlGaN/GaN high electron mobility transistors (HEMTs) grown by plasma-assisted molecular beam epitaxy (MBE) on semi-insulating SiC substrates.
InGaAsP quasi index guided multi-ridge waveguide laser arrays emitting at 1.3 microns have been fabricated.
A 26dBm L-Band Lumped Raman Fibre Amplifier based on highly non-linear Ge-doped Photonic Crystal Fiber is reported.
A novel high power laser light source with an output power exceeding 1mW (10 sup 4 times the power from previous sources) and small (300 nm to less than 50 nm diameter) output beam size for high-re
Emerging free-space optical communications applications require high power optical amplifiers (HPOAs) designed to differing requirements: wavelength band, modulation, polarization, and environment.
New OCT systems demand higher resolution using broadband SLDs. This paper presents a new class of SLDs based on chirped multilayered quantum dots to achieve broad spectral widths.
Gaussian shaped picosecond pulses as short as 62 psec have been obtained from an array of 10 phase coupled multi-quantum well GaAs lasers.
Semi-insulating blocked planar buried-heterostructure (SIPBH) lasers grown entirely by atmospheric-OMVPE had current thresholds as low as 20 mA and differential quantum efficiencies> 20% at 1.3
We present the design and the performance of a monolithically integrated master oscillator power amplifier at 1.5 μm.
