Techniques and CAD tools that obtain maximum performance CMOS technology at reasonable design costs will be described.
We review latest performances, barriers and trends ahead in high performance electronics for terabit-class optical transceivers in datacom and telecom applications.
We have demonstrated a low-cost high-bandwidth and high-responsivity evanescent waveguide unitravelling-carrier photodiode (PD) fabricated using all 2-in InP processing including on-wafer mirrors a
High performance Ga sub (0.4) In sub (0.6) As/Al sub (0.55) In sub (0.45) As pseudomorphic modulation-doped field-effect transistors (MODFETs) have been further improved by replacing the Al sub (0.
We have fabricated highly sensitive, planar, interdigitated photoconductive detectors on undoped Ga(0.47)In(0.53)As that is grown lattice-matched on a semi-insulating InP substrate by chemical beam
InGaAs junction field effect transistors (JFET) are fabricated with MOCVD grown n-InGaAs and semi-insulating Fe:InP layers on n sup + -InP substrate with a P/Be co-implanted p sup + self-aligned ga
We report experimental characterization results for Near Infrared planar photodiodes with a potential cut-off wavelength higher than 1900 nm.
This paper surveys integrated circuits for lightwave systems that have been reported in the literature and that function at data rates ranging from approximately 500 Mb/s to 6 Gb/s.
In this paper we present a high-speed photo-detector comprising a uni-traveling carrier photo-diode (UTC PD) monolithically integrated with a semiconductor optical amplifier (SOA) for 100Gbit/s app
In this paper, we demonstrate that the performance of nonlinear frequency division multiplexed (NFDM) systems em-ploying the continuous nonlinear spectrum is significantly enhanced by modulating on
