Publications

We propose a bit-error rate assessment, and polarisation sensitivity characterization of an all-optical clock-recovery at 42.66 Gbit/s in a system environment.

A novel complementary silicon bipolar process has been developed specifically for high performance 5 V analog and mixed analog- digital applications.

In this paper we discuss a system for automatically recognizing fluently spoken digit strings based in whole word reference units.

This memoranda describes a 256 input by 256 output asynchronous, strictly non-blocking, space division crosspoint switch which is being fabricated in 1micron CMOS VLSI ICs mounted on an AVP substra

Techniques and CAD tools that obtain maximum performance CMOS technology at reasonable design costs will be described.

We review latest performances, barriers and trends ahead in high performance electronics for terabit-class optical transceivers in datacom and telecom applications.

We have demonstrated a low-cost high-bandwidth and high-responsivity evanescent waveguide unitravelling-carrier photodiode (PD) fabricated using all 2-in InP processing including on-wafer mirrors a

High performance Ga sub (0.4) In sub (0.6) As/Al sub (0.55) In sub (0.45) As pseudomorphic modulation-doped field-effect transistors (MODFETs) have been further improved by replacing the Al sub (0.

We have fabricated highly sensitive, planar, interdigitated photoconductive detectors on undoped Ga(0.47)In(0.53)As that is grown lattice-matched on a semi-insulating InP substrate by chemical beam

InGaAs junction field effect transistors (JFET) are fabricated with MOCVD grown n-InGaAs and semi-insulating Fe:InP layers on n sup + -InP substrate with a P/Be co-implanted p sup + self-aligned ga