Publications

We report direct measurements of the high field drift velocities of photoexcited electrons in p-type multiple quantum well structures of GaAs/Al0.48Ga0.52As by picosecond time-of-flight techniques.

In this paper, we report high performance OFETs using two new oligomers, based on fluorene and bithiophene, as the semiconducting layer.

We have achieved avalanche gain at a wavelength of 10.3microns in Al sub x Ga sub 1-x As/GaAs quantum well superlattices.

We have measured the longitudinal magnetoconductivity of a dilute 2D electron gas in the high field limit (omega sub c tau sub o >>1).

A high field room temperature poling technique has been developed for preparing poly(vinylidene fluoride), PVDF, films with high piezoelectric activity.

Magnetophonon resonance at high electric fields in thin (1 to 9micrometer) n(1+)nn(1+) GaAs sandwich structures reveals a new mode of magnetoconduction, elastic inter-Landau level scattering, in wh

High Frequency Amplifiers B y H . T . F R I I S and A . G .

A new high frequency buried heterostructure laser is described and fabricated using two epitaxial growth steps, grown entirely by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE).

We measure the real and imaginary conductivity sigma(k=0,omega) of a high-mobility two-dimensional electron gas (2DEG) system at frequencies below and above the momentum scattering rate.

We describe the structure and performance characteristics of an InGaAs/InP multiple quantum well (MQW)) electroabsorption buried mesa optical modulator.