A high field room temperature poling technique has been developed for preparing poly(vinylidene fluoride), PVDF, films with high piezoelectric activity.
Magnetophonon resonance at high electric fields in thin (1 to 9micrometer) n(1+)nn(1+) GaAs sandwich structures reveals a new mode of magnetoconduction, elastic inter-Landau level scattering, in wh
High Frequency Amplifiers B y H . T . F R I I S and A . G .
A new high frequency buried heterostructure laser is described and fabricated using two epitaxial growth steps, grown entirely by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE).
We measure the real and imaginary conductivity sigma(k=0,omega) of a high-mobility two-dimensional electron gas (2DEG) system at frequencies below and above the momentum scattering rate.
We describe the structure and performance characteristics of an InGaAs/InP multiple quantum well (MQW)) electroabsorption buried mesa optical modulator.
Noise mechanisms that limit the high frequency performance of submicron channel length NMOS FETs are presented.
Periodic patterns of relief defined on a substrate using conventional lithographic techniques are phononic crystals for surface localized acoustic waves.
High frequency structural relaxation in glass forming solutions of LiCl in water was studied using complex conductivity measurements in the frequency range 0.5 MHz to 32 GHz for temperatures betwee
We report results of studying non-equilibrium transport in heterostructure bipolar transistors at millimeter-wave band. Increasing the total potential drop in the collector from 0.
