Publications

Previous Raman studies of La sub 2 CuO sub 4, the insulating parent compound of the high T sub c superconductor, have found well-defined spin pair excitations of B sub (1g) symmetry at ~3000 cm sup

New dielectric materials of Gd sub 2 O sub 3 (epsilon = 12) and Y sub 2 O sub 3 (epsilon = 18) were prepared in both single crystal and amorphous forms as gate oxide for Si by ultrhigh vacuum vapor

We report on growth and characterization of both epitaxial and amorphous films Gd2O3 of (epsilon=14) and Y2O3 (epsilon=18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor depositi

MEMS fabrication faces multiple technological challenges before it can become a commercially viable technology.

We demonstrate continuous wave with an external efficiency over 0.15 W/A and monomode operation of a full photonic crystal (PhC) laser.

For the first time with a directly modulated InAs-GaAs quantum-dot laser, high extinction ratio (up to 17 dB) and 25/spl deg/C-85/spl deg/C single-mode-fiber data floor-free transmissions are achie

For the first time with a directly modulated InAs-GaAs quantum-dot laser, high extinction ratio (up to 17 dB) and 25 degrees C-85 degrees C single-mode-fiber data floor-free transmissions are achie

New AlGaInAs EAM provides optical picosecond pulses with a high extinction ratio over a 40 nm large spectral range at 40 GHz rate suitable for WDM NRZ-RZ conversion.

Piezoelectric fans have been studied extensively and are seen as a promising technology for thermal management due to their ability to provide quiet, reliable cooling with low power consumption.

It is shown that by switching a specific time-dependent interaction between a harmonic oscillator and a transmission line (a waveguide, an optical fiber, etc.) the quantum state of the oscillator c