The ongoing effort within the power supply industry to develop higher frequency, higher power density DC-to-DC power converters in the 25 to 150 watt range has gained considerable momentum in recen
We propose a hybrid wavelength-division-multiplexing/time-division-multiplexing architecture using reflective semiconductor optical amplifiers (RSOAs) for next-generation access solutions.
This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiNx antireflection c
Traveling-wave amplification of a lambda = 1.53microns signal with +22 dB gain is achieved at 295 K in an Er sup 3+ doped single-mode fiber using a lambda = 514.5 nm pump source.
The capability for high quality heterostructure bipolar transistors with structures in the InGaAs/InP system has been demonstrated by gas source molecular beam epitaxy.
An InP HBT technology developed at Lucent Technologies Bell laboratories, with peak ft-100 GHz is used to design and fabricate a limiting amplifier with high gain and bandwidth margin at 10 Gbps.
AlGaAs/GaAs heterojunction bipolar transistors (HBT's) with graded band gap bases were fabricated from computer controlled MBE layers.
High-performance and compact 40-Gb/s driver amplifiers were realized in 1.2-mum emitter double-heterojunction InGaAs-InP HBT (D-HBT) technology with a maximum cut-off frequency (f(T)) of 150 GHz an
We present a high speed phototransistor with integrated waveguide based on our InP double hetrojunction bipolar transistor (DHBT) process technology.
For long-wavelength (1.3microns and 1.5microns) high-bit-rate (>400 Mbit/s) lightwave systems the highest receiver sensitivities have been achieved with III-V compound avalanche photodiodes with
