We demonstrate interoperability of a 59 km few-mode-fiber span, a 35 km coupled-core multi-core fiber span, and a 15-km six SMF span in a wavelength routed network using 48-port WSSs compatible wit
We report on a III-V on Silicon distributed Bragg reflector laser with adiabatic coupling operating continuous wave at 1547 nm.
An InP/Silicon hybrid laser based on double taper adiabatic mode transfer and BCB bonding is demonstrated, exhibiting nearly 1 mW output power at room temperature in pulsed operation regime.
In this presentation, we will present our design strategies adopted to boost the performance of heterogeneously integrated III-V-on-Si quantum well lasers for optical communications.
Heterojunction InP/InGaAs phototransistors with base terminals have been fabricated by atmospheric pressure metal organic vapor phase epitaxy.
Remarkable progress has been made in practical use of high-speed heterostructure device technologies for communications.
The principles and technology of Heterostructure FETs (HFETs) are reviewed in this talk.
Since the demonstration of the first n-AlGaAs/GaAs Heterostructure FET (HFET) in 1980, it has been shown to be a promising technology for microwave and digital applications.
The heterostructure field effect transistor (HFET) has made a dramatic impression on ultra-high speed electronics since the pioneering work in the early 1980's.
We report the successful fabrication of InGaAs FETs with heterostructure-insulated gates suitable for high-speed, enhancement-mode operation.
