High Performance Ga(0.47)In(0.53)As Photoconductive Detectors Grown by Chemical Beam Epitaxy.

We have fabricated highly sensitive, planar, interdigitated photoconductive detectors on undoped Ga(0.47)In(0.53)As that is grown lattice-matched on a semi-insulating InP substrate by chemical beam epitaxy. The devices exhibit intensity dependent gains as high as 7000, gain-bandwidth products of 20 GHz, detectivities as large as 10(2) cm Hz(1/2) W(-1) at 300K, and responsivities close to 3000 A/W at lambda = 1.3micron. These results are similar to the highest performance characteristics obtained with Ga(0.47)In(0.53)As photoconductive detectors that are grown by well established techniques.