We describe the structure and performance characteristics of an InGaAs/InP multiple quantum well (MQW)) electroabsorption buried mesa optical modulator.
Noise mechanisms that limit the high frequency performance of submicron channel length NMOS FETs are presented.
Periodic patterns of relief defined on a substrate using conventional lithographic techniques are phononic crystals for surface localized acoustic waves.
High frequency structural relaxation in glass forming solutions of LiCl in water was studied using complex conductivity measurements in the frequency range 0.5 MHz to 32 GHz for temperatures betwee
We report results of studying non-equilibrium transport in heterostructure bipolar transistors at millimeter-wave band. Increasing the total potential drop in the collector from 0.
The ongoing effort within the power supply industry to develop higher frequency, higher power density DC-to-DC power converters in the 25 to 150 watt range has gained considerable momentum in recen
We propose a hybrid wavelength-division-multiplexing/time-division-multiplexing architecture using reflective semiconductor optical amplifiers (RSOAs) for next-generation access solutions.
This letter demonstrates a planar junction GalnAs-AlInAs avalanche photodiode using back-side illumination through thinned InP substrate covered with chemical vapor deposition SiNx antireflection c
Traveling-wave amplification of a lambda = 1.53microns signal with +22 dB gain is achieved at 295 K in an Er sup 3+ doped single-mode fiber using a lambda = 514.5 nm pump source.
The capability for high quality heterostructure bipolar transistors with structures in the InGaAs/InP system has been demonstrated by gas source molecular beam epitaxy.
