In this paper, AlGaN/GaN heterostructures grown by plasma-assisted MBE on semi-insulating 6H-SiC.
A distributed balanced photodetector with high saturation photocurrent and excellent linearity has been experimentally demonstrated.
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods of "bandstructure engineering" and realized by molecular beam epitaxy (MBE).
We present a novel scheme for a digitally tuneable laser requiring only P+Q+1 optical amplifiers for a device with in total PxQ wavelength channels.
In this letter we present high power and low RIN (Relative Intensity Noise) directly modulated distributed feedback lasers at 1.55 μm for analog transmissions (for radars and electronic warfare).
We have fabricated InGaAsP gain guided laser arrays emitting at 1.3micron.
We report on the growth and power performance of GaN/AlGaN/GaN high electron mobility transistors (HEMTs) grown by plasma-assisted molecular beam epitaxy (MBE) on semi-insulating SiC substrates.
InGaAsP quasi index guided multi-ridge waveguide laser arrays emitting at 1.3 microns have been fabricated.
A 26dBm L-Band Lumped Raman Fibre Amplifier based on highly non-linear Ge-doped Photonic Crystal Fiber is reported.
A novel high power laser light source with an output power exceeding 1mW (10 sup 4 times the power from previous sources) and small (300 nm to less than 50 nm diameter) output beam size for high-re
