GaAs-Al(x)Ga(1-x)As single- and multiquantum well structures grown by metals organic chemical vapor deposition, have been examined for the first time in detail using low temperature photoluminescen
Amorphous silicon Schottky barrier photodetectors with internal quantum efficiencies of 36% and sampling ocilloscope limited response times of 40 ps (FWHM) have been fabricated.
Current North American Time Division Multiple Access systems support voice services and circuit data services at a rate limited to 9.6 kb/s.
Distributed Bragg reflector (DBR) structures based on AlN/GaN have been grown on (0001) sapphire by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy (ECR-MBE).
A number of distributed Bragg reflectors (DBRs) based on AlN/GaN quarterwave layers have been grown on (0001) sapphire by electron cyclotron resonance plasma-assisted molecular-beam epitaxy.
We demonstrate high-reflectivity crack-free Al0.13Ga0.87N/Al0.
This paper describes an original planar solution used to realize a high rejection planar filter in C-band for a given spatial application.
We present a single-mode, polarization-maintaining, Er/Yb-codoped cladding-pumped amplifier with up to 49 dB of gain, 13W output power, a 30 dB polarization-extinction ratio, 12.9% electrical to op
Over a hundred years of development of submarine cables for the telecom industry has resulted in highly reliable commercially off the shelf (COTS) products.
First observations of 2-section InAs/InP quantum-dash passive mode locking (ML) at fundamental repetition frequencies up to ~100 GHz are presented.
