It is known1-8 that in certain waveguides the field becomes, under certain conditions, very small at the boundary.
Silicon and germanium semiconductor materials have been used in point-contact rectifiers for many years and numerous types of rectifiers employing these two materials are commercially available tod
Injection lasers are inherently suited for high-frequency (>50 MHz) applications.1,2 In the Bell System, the commonly used GaAs doubleheterostructure (DH) stripe geometry laser is obtained by ei
We have observed very high-frequency, highly reproducible magneto-oscillations in modulation doped GaAs/AlGaAs quantum well structures.
Quantum cascade (QC) lasers, based on intersubband transitions in semiconductor quantum wells, are characterized by ultrafast (picosecond) carrier lifetimes.
The Esaki 1 diode ( or tunnel diode) exhibits a negative-resistance characteristic in the forward-biased region as shown in Fig. 1.
Static performances and high-frequency characterisation of a GaInNAs/GaAs laser diode emitting at 1.35 mum are reported.
Laterally complex coupled distributed feedback lasers have been fabricated by focused-ion-beam lithography on completely grown InGaAsP/InP laser structures emitting at 1.55 mu m.
We report the high-frequency Raman spectra (DELTA omega > 1000 cm sup (-1)) of Ba sub 2 YCu sub 3 O sub x and various analogues, measured at room temperature.
Measured small-signal frequency response characteristics of directly modulated long-cavity and short-cavity InGaAsP double- channel planar buried heterostructure (DCPBH) lasers are reported.
