Publications

Static performances and high-frequency characterisation of a GaInNAs/GaAs laser diode emitting at 1.35 mum are reported.

Laterally complex coupled distributed feedback lasers have been fabricated by focused-ion-beam lithography on completely grown InGaAsP/InP laser structures emitting at 1.55 mu m.

We report the high-frequency Raman spectra (DELTA omega > 1000 cm sup (-1)) of Ba sub 2 YCu sub 3 O sub x and various analogues, measured at room temperature.

Measured small-signal frequency response characteristics of directly modulated long-cavity and short-cavity InGaAsP double- channel planar buried heterostructure (DCPBH) lasers are reported.

The theory and characteristics of the triangular loop elements were described in Commun., 29,16-18 (Aug., 1949).

A mode-adapted Semiconductor Optical Amplifier (SOA) has been fabricated and packaged. Statistics for 8 packaged devices, at 1550 nm, indicate a fiber-to-fiber gain of 26.3 dB +/- 1.

Many materials systems are currently under consideration as potential replacements for SiO(2) as the gate dielectric material for sub-0.1 mum complementary metal-oxide-semiconductor (CMOS) technolo

We analyze measurements of the 0.5-1.0 MeV/nucleon H/He intensity ratio from the Ulysses spacecraft during its first (1992-94) and second (1999-2000) ascent to southern high latitude regions of the

We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides.

Optimal dense wavelength-division multiplexed transmission is obtained based on high-order periodic dispersion-managed solitons in a dispersion-slope-compensated fiber link.