A fully ion-implanted, planar InP JFET has been developed that exhibits high transconductance, low leakage and low pinchoff voltage.
In a world where virtually all consumer devices will soon be speaking the same digital language, the ability to connect hardware and distribute content from one box to another creates important opp
A new approach of achieving high power factor in a zero current- zero voltage switching tuned converter is presented.
A new standard of frequency is described in which three 100,000 cycle quartz crystal-controlled oscillators of very high constancy are employed.
The effect of pressure on 9-hydroxyphenalenone (9-HPLN) has been investigated using Raman scattering and optical absorption techniques in a diamond anvil cell up to 70 kbar hydrostatic pressure.
Cerium dioxide (Ce0 sub 2) which crystallizes in the fluorite structure has been studied by high pressure Raman spectroscopy using a diamond anvil cell, up to 35 GPa.
The pressure dependence of the Raman spectrum of KReO sub 4, RbReO sub 4 and CsReO sub 4 has been investigated to 25 GPa using the diamond anvil cell.
Potassium titanate orthrophosphate KTiOPO sub 4 (KTP) has been studied by high pressure Raman technique to 17 GPa using a diamond cell.
The pressure dependence of the optical phonon frequencies in berlinite (AlPO sub 4) and alpha-quartz has been investigated by high pressure Raman scattering experiments, using a diamond cell; berli
The pressure dependence of the first-order Raman peak and two second-order Raman features of ThO sub 2 crystallizing in the fluorite type structure are investigated using a diamond anvil cell, up
