Intrinsic gettering (IG) by oxygen precipitates in Czochralski- grown silicon has been evaluated over a wide range of initial interstitial oxygen concentration 15 [O(i)]o 22 ppma with and withou
The substitution of deposited alternative Sate dielectrics for thermally grown SiO(2) in aggressively scaled complementary metal-oxide-semiconductor devices requires separate and independent proces
The scaling of electrical oxide thickness to 1.0 nm and below for advanced silicon devices requires a change from thermally grown oxides and nitrided oxides to deposited dielectrics which have diel
We have measured the intrinsic photoinduced anomalous Hall effect (PI-AHE) in very high mobility two-dimensional hole gases.
The chemisorption and subsequent decomposition of methyl bromide on a Mg(0001) single crystal surface is found to lead cleanly to the formation of a surface bromide and gas phase ethane.
High resolution X-ray studies of Ga sub 0.47 In sub 0.53 As/InP superlattices reveal, for the first time, the presence of an intrinsic interfacial strain at heteroepitaxial interfaces.
High resolution X-ray diffraction (HRXRD) studies of Ga sub 0.47 In sub 0.53 As/InP superlattices reveal, for the first time, the presence of an intrinsic interfacial strain at heteroepitaxial inte
Reliable power systems are vital to the operation of public communications network infrastructure.
The proliferation of mobile devices, the shift towards cloud computing, and the increased use of information technology in critical infrastructures have opened new attack vectors and risks.
Today, with IMT 2000 and UMTS the global standards for 3rd generation mobile services have been created, field trials have been started, and network installations are currently being prepared.
