The concept of strained layer epitaxy has stimulated new interest in the growth of IV-IV heterostructures.
We examine the derivation and use of a "d"-1 dimensional interface Hamiltonian to describe properties of a "d" dimensional liquid- vapor or Ising system near the critical point.
There is an increasing experimental evidence for the existence of liquid-like layers on crystal surfaces and in grain boundaries, although the issue remains controversial.
We have used photothermal deflection spectroscopy to examine deep gap absorption in amorphous silicon films deposited on silicon oxide and silicon nitride.
Infrared detectors based on a quantum cascade have been proposed to suppress the dark current which is a limiting factor in quantum well infrared photodetectors.
Heteroepitaxial layers grown by Molecular Beam Epitaxy on silicon offer well-controlled interfaces parallel to the surfaces of a thin foil.
The interface structures and interfacial defects in CoSi sub 2 /Si heteroepitaxy have been the subject of intensive study for over a decade now, but the system continues to provide us with surprise
The study of interfaces represents one of the most challenging areas in materials science.
Chemical and physical analyses of materials interfaces are important technological fields, but difficult scientific challenges.
This paper presents an approach to interfacing a computing environment for statistics to numerical calculations, text processing and other computations, in the context of the Quantitative Programmi
