Publications

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Interprofile conditions and impossibility

Includes index.

Interregister multifrequency-code signalling for telephone switching in Europe

The necessity of international agreement on telephone signaling has been felt since 1957 by both administrations and manufactures developing common-control switching systems.

Interstellar molecular clouds.

The interstellar medium in our galaxy contains matter in a variety of states ranging from hot plasma to cold and dusty molecular gas.

Interstitial Channels for Doubling TD-2 Radio System Capacity

The TD-2 microwave radio relay system at the present time provides six broadband channels in each direction of transmission in the f requency band between 3700 and ^200 mc, each channel being capab

Interstitial defect reactions in silicon.

Deep level transient spectroscopy has been employed in a study of impurity - interstitial defect reactions in silicon following room temperature electron irradiation.

Intersubband absorption at h ~ 2.1 um in A-plane GaN/AlN multiple quantum wells

Intersubband optical absorption at h ~ 2.1 um wavelength in doped 17.5 Å wide GaN quantum wells (QWs) with 51 Å wide intermediate AlN barriers is reported.

Intersubband absorption at lambda similar to 1.55 mu m in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

Intersubband optical absorption around 1.55 mum has been measured in GaN/AlGaN multiple quantum wells (MQWs) grown by molecular-beam epitaxy.

Intersubband absorption at lambda similar to 2.1 mu m in A-plane GaN/AlN multiple quantum wells

Intersubband optical absorption at lambdasimilar to2.1 mum wavelength in doped 17.5 Angstrom wide GaN quantum wells (QWs) with 51 Angstrom wide intermediate AlN barriers is reported.

Intersubband Absorption at lambda ~ 1.55microns in well- and Modulation-doped GaN/AlGaN Multiple Quantum Wells with Superlattice Barriers

Intersubband optical absorption around 1.55microns has been measured in GaN/AlGaN multiple quantum wells (MQWs) grown by molecular beam epitaxy.

Intersubband Absorption at lambda ~ 2.1 mum in A-Plane GaN/AIN Multiple Quantum Wells

Intersubband optical absorption at lambda ~ 2.1 mum wavelength in doped 17.5 Angstrom GaN quantum wells (QWs) with 51 Angstrom wide intermediate AIN barriers is reported.