We have devised a contact printing technique for transferring functional materials from the raised regions of a stamp onto a substrate.
This paper introduces the use of SAMs as covalent "glues" and "release" layers for transferring material from relief features on a stamp to a substrate.
A silicon (Si) wafer passivated with a nitride film, fabricated by low-pressure chemical vapor deposition, and coated with epoxy was used as a test specimen to characterized the interfacial degrada
There has been an increasing interest in recent months in the dual dielectric metal insulator semiconductor (MIS) cell as a nonvolatile semiconductor memory element.
Cross-sectional transmission electron microscopy (XTEM) of this sample revealed an interfacial reaction zone with complicated microstructure, and the dominant interfacial compound was identified to
High dielectric constant (k) materials are being considered as a replacement for SiO2 and SIN in capacitors for DRAM and RF circuits as critical dimensions of ICs continue to decrease.
High resolution X-ray diffraction (HRXRD) studies of GaInAs/InP superlattices reveal the presence of an intrinsic interfacial strain at heteroepitaxial interfaces.
High-resolution x-ray diffraction studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices grown by gas-source mole
An interfacing program has been written which enables a user with an AT&T 6300/IBM compatible PC to control a HP4145 Semiconductor Parameter Analyzer via a HPO-IB Bus.
The Teletype 5620 bitmap-display terminal has an external I/0 port that permits a knowledgeable user to construct small interfaces.
