Publications

Two papers have already appeared on the field-effect transistor, 1 ' 2 in which the basic features of the theory were presented and their experimental verification discussed.

Lewis and Wasserstrom 1 have calculated the strength of the field singularity at the tip of a dielectric wedge in the configuration shown in Fig. 1.

Beneath a charged electrode situated on the surface of a semiconductor, at points far from the electrode edge, the electrostatic field is regular and quasi-one-dimensional, with its maximum value a

The fifteen causes of color derived from a variety of physical and chemical mechanisms are summarized in five groups. Vibrations and simple excitations explain the colors of incandescence (e.g.

This report describes an incremental backup system that automatically tracks and stores modified files from a group of client Unix systems on a central backup system.

We demonstrated the first coherent receiver with III-V on silicon monolithic integrated local oscillator.

The Sloan Digital Sky Survey (SDSS) has validated and made publicly available its First Data Release.

This paper presents the first end-to-end field trial of the U.S.

Ferroelectric oxides with structures related to that of tetragonal potassium tungsten bronze, such as Ba sub 2 NaNb sub 5 O sub 15, K sub 3 Li sub 2 Nb sub 5 O sub 15 and PbNb sub 2 O sub 6, have b

In this paper we calculate the electrostatic potential in a currentfree semiconductor surrounding a semi-infinite flat plate carrying a small potential.