Thermal characteristics of a Al-free high power diode laser were studied by a simple non-destructive technique of time-resolved measurement of Fabry-Perot oscillations.
We have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultra-short light pulse.
No abstract provided from esearch BL85.52655.
In this paper we investigate the strength of molecular adsorption on the surface necessary for such charge transfer to occur.
The propagation of defect networks in failed 980 nm emitting high-power diode lasers is analyzed.
The recently developed technique of two-photon time- and angle- resolved photoemission spectroscopy has been used to observe the dynamics of surface state populations directly as photoexcited bulk
Surface recombination of bulk photoexcited electrons at the cleaved Si(111) 2x1 surface has been studied using the technique of picosecond time- and angle-resolved photoemission spectroscopy.
The authors propose and demonstrate a simple nondestructive technique that allows characterizing precisely the thermal properties of semiconductor lasers.
Thermal crosstalk in a diode array has been investigated using a time-resolved technique.
Seeded optical parametric amplification using amplified 350 fs visible dye laser pulses has been used to generate short pulses in the mid-infrared.
