The transmission electron microscope is well suited to the study of surface phenomena, provided in-situ specimen cleaning and preparation conditions are provided.
Heteroepitaxy has become a technologically important process in recent years, for example with the growth of GaAs on Si.
The silicides CoSi sub 2 and NiSi sub 2 are both metallic with the fcc flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) C
This is a short critical assessment of the role of transmission electron microscopy in the study of layered materials solicited by Scripta Metallurgica.
Line widths of less than a micron and junction depths within devices of the order of a thousand angstroms are common practice in today's electronic components.
InP/InGaAs and InGaAs/InP interfaces in heterostructures grown by metalorganic vapor-phase epitaxy (MOVPE) have been studied by transmission electron microscopy (TEM).
Transmission Errors and Forward Error Correction in Embedded Differential Pulse Code Modulation By D. J.
We report the first fiber optic transmission experiment employing close spaced wavelength division multiplexing and high bit- rate modulation.
The new telephone instruments now being introduced by the Bell System result in an outstanding improvement in transmission performance in service.
In a random access, packet transmission system, the transmission from a source may overlap with, pre-emp, or be pre-empted by, transmissions from other sources.
