Publications

We have measured detailed I-V characteristics of small areas of YBa sub 2 Cu sub 3 O sub (7-delta) films, which exhibit structure associated with individual Josephson junctions within the film.

We provide a semiclassical theory of tunneling decay in a magnetic field and a three-dimensional potential of a general form.

We show that, if there is a magnetic field having a component parallel to a 2D electron layer, strong electron correlations can change the rate of tunneling from the layer to the 3D continuum expon

We show that in a magnetic field parallel to a two-dimensional (2D) electron layer, strong electron correlations can change the rate of tunneling from the layer to the 3D continuum exponentially.

Tunneling images of vicinal Si(001) tilted 4D about the [bar over 110] direction have been obtained.

We report the first observation of tunneling through In sub (0.53) Ga sub (0.47) As-InP double-barrier structures at 77K and 4.2K.

We obtain the exact solution for an electron tunneling through a thin barrier and coupled to Einstein phonons, by means of a continued fraction expansion.

We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system.

This paper reports experimental data and simulations of low-voltage tunneling in ultrathin oxide MOS devices, When the substrate is very heavily doped, a thermionic barrier is present that opposes

We have measured, for the first time, the continuous infrared (lambda ~ 10microns) photoconductivity spectrum, for an intersubbard absorption photoexcited tunneling quantum well detector.